High-uniformity GaN film growing on sapphire substrate

生长在蓝宝石衬底上的高均匀性GaN薄膜

Abstract

本实用新型涉及一种生长在蓝宝石衬底上的高均匀性GaN薄膜,包括Al2O3衬底及其(0001)面往(10-10)面偏0.2°方向依次外延生长的AlN形核层和GaN薄膜。本实用新型的GaN薄膜成本低、质量优、均匀性高,应用广泛。
The utility model relates to a high-uniformity GaN film growing on a sapphire substrate. The high-uniformity GaN film comprises an Al2O3 substrate, and an AlN nucleation layer and a GaN film growing in an epitaxial manner in sequence in the direction from a (0001) surface to a (10-10) surface of the Al2O3 substrate at an angle of 0.2 degrees. The GaN film is advantaged by low cost, high quality, high uniformity, and wide application.

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