半導体装置及びその製造方法

Semiconductor device and method of manufacturing the same

Abstract

PROBLEM TO BE SOLVED: To prevent electrical interference via the substrate among a plurality of semiconductor device elements which are mutually connected by wiring and to impede variation of the width of a groove for isolating the semiconductor device elements, in relation to the method of manufacturing a semiconductor device having a plurality of semiconductor device elements. SOLUTION: A plurality of semiconductor device elements 12a-12c are respectively formed on the front surfaces of a plurality of functional unit regions A patterned on a semiconductor substrate 11. The semiconductor device elements 12a-12c are connected by wiring 14 within a functional unit region A only, and a connection layer 13 that mechanically connects the semiconductor device elements 12a-12c in the functional unit region A only is formed on the surface side of the semiconductor substrate 11. In this condition, a groove 11a is formed from the backside of the semiconductor substrate 11 to remove the parts of the substrate 11 existing between the positions where the semiconductor devices 12a-12c are located. The aforementioned steps are included in the relevant method. COPYRIGHT: (C)2002,JPO
(57)【要約】 【課題】複数の半導体素子を有する半導体装置の製造方 法に関し、配線によって互いに接続される複数の半導体 素子間での基板を介した電気的干渉を阻止し、かつ、半 導体素子間を分離する溝の幅が変動し難くすること。 【解決手段】半導体基板11に画定された複数の機能単 位領域Aの表面側にそれぞれ複数の半導体素子12a〜 12cを形成し、それらの半導体素子12a〜12cを 機能単位領域A内だけで配線14によって接続し、且つ 機能単位領域A内でのみ半導体素子12a〜12cの間 を機械的に接続する接続層13を半導体基板11の表面 側に形成した状態で、半導体基板11の裏側から溝11 aを形成して半導体素子12a〜12c間で基板11を 分離する工程を含む。

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle