Method for producing semiconductor device and semiconductor producing device



(57)【要約】 【課題】 半導体チップの不良解析における不良箇所の 特定精度および解析処理能力の向上を図る。 【解決手段】 半導体チップの不良箇所から発生する 光、熱および赤外線を検出して電流増幅可能な複数の検 出素子3がマトリクス配置で設けられた検出用基板4を 準備し、前記半導体チップを有した検査対象の半導体ウ ェハを検出用基板4に配置した後、前記半導体チップを プローブ検査し、前記プローブ検査において前記不良箇 所から発生する前記光、前記熱および前記赤外線などの 媒体を検出素子3によって検出して検出素子3内の電流 を増幅してラッチアップさせ、このラッチアップによっ て認識する前記マトリクス配置の検出素子3の位置に対 応させて前記半導体チップの前記不良箇所の位置を座標 として検出することにより、前記不良箇所の特定精度を 向上できる。
PROBLEM TO BE SOLVED: To attain improvement in the specification accuracy and analysis throughput of a defective spot in the defect analysis of a semiconductor chip. SOLUTION: A substrate 4 for detection is prepared while providing the matrix array of plural detecting elements 3 capable of amplifying a current by detecting light, heat and infrared rays generated from the defective spot of the semiconductor chip and after the semiconductor wafer of an examination target having the semiconductor chip is located on the substrate 4 for detection, the probe examination of the semiconductor chip is performed. In this probe examination, the current inside the detecting element 3 is amplified and latched up by detecting the medium such as light, heat or infrared rays generated from the defect spot by means of the detecting element and corresponding to the positions of the detecting elements 3 in the matrix array recognized by this latch-up, the position of the defective spot on the semiconductor chip is detected as coordinates so that the specification accuracy of the defective spot can be improved.




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